For a complete list of Dr. Paul M. Thibado’s publications visit this page.

 

Array of Graphene Solar Cells on 100 mm Silicon Wafers for Power Systems

S.M. Rahman, Md R. Kabir, T.B. Amin, J.M. Mangum, Ashaduzzaman, and P.M. Thibado

Energies 17, 5895 (2024).

 

Charging capacitors from thermal fluctuations using diodes

P.M. Thibado, J.C. Neu, P. Kumar, S. Singh, and L.L. Bonilla 

Physical Review E 108, 024130 (2023).

 

Freestanding graphene heat engine analyzed using stochastic thermodynamics

J. Durbin, J.M. Mangum, M.N. Gikunda, F. Harerimana,  T. Amin, P. Kumar, L.L. Bonilla, and P.M. Thibado

AIP Advances 13, 075217 (2023).

 

 Array of Graphene Variable Capacitors on 100 mm Silicon Wafers for Vibration-Based Applications

M.N. Gikunda, F. Harerimana, J.M. Mangum, S. Rahman, J.P. Thompson, C.T. Harris, H. Churchill, and P.M. Thibado

Membranes 12, 533 (2022).

 

Mechanisms of Spontaneous Curvature Inversion in Compressed Graphene Ripples for Energy Harvesting Applications via Molecular Dynamics Simulations

J.M. Mangum, F. Harerimana, M.N. Gikunda, and P.M. Thibado

Membranes 11, 516 (2021).

 

Fluctuation-induced current from freestanding graphene

P.M. Thibado, P. Kumar, S. Singh, M. Ruiz-Garcia, A. Lasanta, and L.L. Bonilla

Physical Review E 102, 042101 (2020).

 

Efficient circuit design for low power energy harvesting

F. Harerimana, H. Peng, M. Otobo, F. Luo, M.N. Gikunda, J.M. Mangum, V.P. LaBella, and P. M. Thibado

AIP Advances 10, 105006 (2020).

 

Exact Traveling and non-traveling wave solutions of the time fractional reaction-diffusion equation

Bailin Zheng, Yue Kai, Wenlong Xu, Nan Yang, Kai Zhang, and P. M. Thibado

Physica A 532, 121780 (2019).

 

Origin of Non-Gaussian Velocity Distribution Found in Freestanding Graphene Membranes

Yue Kai, Wenlong Xu, Bailin Zheng , Nan Yang, Kai Zhang, and P. M. Thibado

Complexity 2019, 6101083 (2019). 

 

Anomalous Dynamical Behavior of Freestanding Graphene Membranes

M.L. Ackerman, P. Kumar, M. Neek-Amal, P.M. Thibado, F.M. Peeters, and S.P. Singh

Physical Review Letters 117, 126801 (2016). Click here for more information about this study.

Click here for the accepted final, but pre-PRL production version.

 

Graphene ripples as a realization of a two-dimensional Ising model: A scanning tunneling microscope study

J.K. Schoelz, P. Xu, V. Meunier, P. Kumar, M. Neek Amal, P.M. Thibado, F.M. Peeters

Physical Review B 91, 045413 (2015).

 

Thermal mirror buckling in freestanding graphene locally controlled by scanning tunnelling microscopy

M. Neek-Amal, P. Xu, J.K. Schoelz, M.L. Ackerman, S.D. Barber, P.M. Thibado, A. Sadeghi, and F.M. Peeters

Nature Communications 5, 4962 (2014).Click here for more information about this study.

 

Invited: Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

P. Xu, D. Qi, J.K. Schoelz, J. Thompson, P.M. Thibado, V.D. Wheeler, L.O. Nyakiti, R.L. Myers-Ward, C.R. Eddy Jr., D.K. Gaskill, M. Neek-Amal, F.M. Peeters

Carbon 50, 75-81 (2014).

 

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

M. Neek Amal, P. Xu, D. Qi, P.M. Thibado, L.O. Nyakiti, V.D. Wheeler, R.L. Myers-Ward, C.R. Eddy, Jr., D.K. Gaskill, and F.M. Peeters

Physical Review B 90, 064101 (2014).

 

Unusual ultralow frequency fluctuations in freestanding graphene

P. Xu, M. Neek-Amal, S. D. Barber, J. K. Schoelz, M.L. Ackerman, P. M. Thibado, A. Sadeghi, and F.M. Peeters

Nature Communications 5, 3720 (2014). Click here for more information about this study.

 

Self-organized platinum nanoparticles on freestanding graphene

P. Xu, L. Dong, M. Neek-Amal, M. L. Ackerman, J. Yu, S. D. Barber, J. K. Schoelz, D. Qi, F. Xu, P. M. Thibado, and F.M. Peeters

ACS Nano 8, 2697-2703 (2014). Click here for more information about this study.

 

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill

Surface Science 617, 113-117 (2013).

 

Etch-stop method for reliably fabricating sharp yet mechanically stable scanning tunneling microscope tips

G. Basnet, J. K. Schoelz, P. Xu, S. D. Barber, M. L. Ackerman, and P. M. Thibado

Journal of Vacuum Science and Technology B 31, 043201 (2013).

 

Role of bias voltage and tunneling current in the perpendicular displacements of freestanding graphene via scanning tunneling microscopy

P. Xu, S. D. Barber, M. L. Ackerman, J. K. Schoelz, and P. M. Thibado

Journal of Vacuum Science and Technology B 31, 04D103 (2013).

 

Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)

P. Xu, S. D. Barber, J. K. Schoelz, M. L. Ackerman, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill

Journal of Vacuum Science and Technology B 31, 04D101 (2013).

 

Graphene manipulation on 4H-SiC(0001) using scanning tunneling microscopy

P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill

Japanese Journal of Applied Physics 52, 035104 (2013).

 

Broad frequency and amplitude control of vibration in freestanding graphene via scanning tunneling microscopy with calculated dynamic pseudo-magnetic fields

P. Xu, J. K. Schoelz, S. D. Barber, M. L. Ackerman, and P. M. Thibado

Journal of Applied Physics 112, 124317 (2012).

 

Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy

P. Xu, Y. Yang, D. Qi, S. D. Barber, J. K. Schoelz, M. L. Ackerman, L. Bellaiche, and P. M. Thibado

Physical Review B 86, 085428 (2012).

[Selected by the editors of PRB to be an Editors’ Suggestion.]

 

Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles

L. Dong, J. Hansen, P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, and P. M. Thibado

Applied Physics Letters 101, 061601 (2012).

 

Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

I. Sitnitsky, J. J. Garramone, J. Abel, P. Xu, S. D. Barber, M. L. Ackerman, J. K. Schoelz, P. M. Thibado, and V. P. LaBella

Journal of Vacuum Science and Technology B 30, 04E110 (2012).

 

New scanning tunneling microscopy technique enables systematic study of the unique electronic transition from graphite to graphene

P. Xu, Y. Yang, S. D. Barber, J. K. Schoelz, D. Qi, M. L. Ackerman, L. Bellaiche, and P. M. Thibado

Carbon 50, 4633-4639 (2012).

 

A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy

P. Xu, Y. Yang, D. Qi, S. D. Barber, M. L. Ackerman, J. K. Schoelz, T. B. Bothwell, S. Barraza-Lopez, L. Bellaiche, and P. M. Thibado

Applied Physics Letters 100, 201601 (2012).

 

High-percentage success method for preparing and pre-evaluating tungsten tips for atomic-resolution scanning tunneling microscopy

J. K. Schoelz, P. Xu, S. D. Barber, D. Qi, M. L. Ackerman, G. Basnet, C. T. Cook, and P. M. Thibado

Journal of Vacuum Science and Technology B 30, 033201 (2012).

[Winner of the 2012 AVS Vacuum Technology Division’s Shop Note Award.]

 

Atomic control of strain in freestanding graphene

P. Xu, Y. Yang, S. D. Barber, M. L. Ackerman, J. K. Schoelz, D. Qi, I. A. Kornev, L. Dong, L. Bellaiche, S. Barraza-Lopez, and P. M. Thibado

Physical Review B 85, 121406(R) (2012).

 

Giant surface charge density of graphene resolved from scanning tunneling microscopy and first-principles theory

P. Xu, Y. Yang, S. D. Barber, M. L. Ackerman, J. K. Schoelz, I. A. Kornev, S. Barraza-Lopez, L. Bellaiche, and P. M. Thibado

Physical Review B 84, 161409(R) (2011).

 

Streamlined inexpensive integration of a growth facility and scanning tunneling microscope for in-situ characterization

P. Xu, D. Qi, S. D. Barber, C. T. Cook, M. L. Ackerman, and P. M. Thibado

Journal of Vacuum Science and Technology B 29, 041804 (2011).

 

Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth

P. Xu, D. Qi, M. L. Ackerman, S. D. Barber, and P. M. Thibado

Journal of Crystal Growth 327, 42-45 (2011).

 

Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu, P. M. Thibado, C. Awo-Affouda, F. Ramos, and V. P. LaBella

Journal of Vacuum Science and Technology B 25(4), 1476-1480 (2007).

 

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

J. F. Xu, S. W. Liu, M. Xiao, and P. M. Thibado

Journal of Vacuum Science and Technology B 25(4), 1467-1469 (2007).

 

Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu, S. W. Liu, M. Xiao, and P. M. Thibado

Journal of Crystal Growth 301-302, 101-104 (2007).

 

Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu, P. M. Thibado, C. Awo-Affouda, R. Moore, and V. P. LaBella

Journal of Crystal Growth 301-302, 54-57 (2007).

 

4 K, ultrahigh vacuum scanning tunneling microscope having two orthogonal tips with tunnel junctions as close as a few nanometers

J. F. Xu, P. M. Thibado, and Z.Ding

Review of Scientific Instruments 77, 093703 (2006).

 

Arsenic-rich GaAs(001) surface structure

V. P. LaBella, M. R. Krause, Z. Ding, and P. M. Thibado

Surface Science Reports 60, 1-53 (2005).

 

Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. LaBella

Journal of Vacuum Science and Technology B 22(4), 2068-2072 (2004).

 

Origins of GaN(0001) surface reconstructions

S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado

Surface Science 541, 242-251 (2003).

 

Time-evolution of the GaAs(001) pre-roughening process

Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and K. Mullen

Surface Science 540, 491-496 (2003).

 

Atomic-scale observation of temperature and pressure driven preroughening and roughening

Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and K. Mullen

Physical Review Letters 90, 216109 (2003).

 

Role of aperiodic surface defects on the intensity of electron diffraction spots

D. W. Bullock, Z. Ding, P. M. Thibado, and V. P. LaBella

Applied Physics Letters 82(16), 2586-2588 (2003).

 

Dynamics of spontaneous roughening on the GaAs (001)-(2×4) surface

Z. Ding, D. W. Bullock, W. F. Oliver, and P. M. Thibado

Journal of Crystal Growth 251, 35-39 (2003).

 

Simultaneous surface topography and spin-injection probability

D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado

Journal of Vacuum Science and Technology B 21(1), 67-70 (2003).

 

Mapping the spin-injection probability on the atomic scale

D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado

Journal of Superconductivity: Incorporating Novel Magnetism 15(1), 37-42 (2002).

 

Enhancing the student-instructor interaction frequency

D. W. Bullock, V. P. Labella, T. Clingan, Z. Ding, G. Stewart, and P. M. Thibado

The Physics Teacher 40, 535-541 (2002).

 

Enabling electron diffraction as a tool for determining substrate temperature and surface morphology

V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, and P. M. Thibado

Applied Physics Letters 79(19), 3065-3067 (2001)

 

Spatially-resolved spin-injection probability for gallium arsenide

V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, M. Mortazavi, W. F. Oliver, G. J. Salamo, and P. M. Thibado

Science 292, 1518-1521 (2001). Click here for more information about this study.

 

Invited: A union of the real-space and reciprocal-space view of the GaAs(001) surface

V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado

International Journal of Modern Physics B 15(17), 2301-2333 (2001).

 

Microscopic structure of spontaneously formed islands on the GaAs(001)-(2×4) reconstructed surface

V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado

Journal of Vacuum Science and Technology B 19(4), 1640-1643 (2001).

 

A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2×4) surface

V. P. LaBella, D. W. Bullock, P. M. Thibado, P. Kratzer, and M. Scheffler

Omicron Newsletter 4(2), 4-5 (2000).

 

Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions

V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado

Journal of Vacuum Science and Technology A 18(4), 1492-1496 (2000).

 

Monte Carlo derived diffusion parameters for Ga on the GaAs(001)-(2×4) surface: a molecular beam epitaxy-scanning tunneling microscopy study

V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, and P. M. Thibado

Journal of Vacuum Science and Technology A 18(4), 1526-1531 (2000).

 

Microscopic view of a two-dimensional lattice-gas Ising system within the grand canonical ensemble

V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, and P. M. Thibado

Physical Review Letters 84(18), 4152-4155 (2000). Click here for more information about this study.

 

Atomic structure of the GaAs(001)-(2×4) surface resolved using scanning tunneling microscopy and first-principles theory

V. P. LaBella, H. Yang, D. W. Bullock, P. M. Thibado, P. Kratzer, and M. Scheffler

Physical Review Letters 83(15), 2989-2992 (1999). Click here for more information about this study.

 

Role of As4 in Ga diffusion on the GaAs(001)-(2×4) surface: a molecular beam epitaxy-scanning tunneling microscopy study

H. Yang, V. P. LaBella, D. W. Bullock, and P. M. Thibado

Journal of Vacuum Science and Technology B 17(4), 1778-1780 (1999).

 

Activation energy for Ga diffusion on the GaAs(001)-(2×4) surface: an MBE-STM study

H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, and P. M. Thibado

Journal of Crystal Growth 201-202, 88-92 (1999).

 

Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy

P. M. Thibado, G. J. Salamo, and Y. Baharav

Journal of Vacuum Science and Technology B 17(1), 253-256 (1999).

 

Enabling in situ atomic-scale characterization of epitaxial surfaces and interfaces

J. B. Smathers, D. W. Bullock, Z. Ding, G. J. Salamo, P. M. Thibado, B. Gerace, and W. Wirth

Journal of Vacuum Science and Technology B 16(6), 3112-3114 (1998).