Articles about this research have appeared in the following sources:
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, W. F. Oliver, G. J. Salamo, P. M. Thibado, and M. Mortazavi
This image shows the spatially resolved spin injection probability for GaAs(110). The blue region is the flat GaAs(110) terrace and indicates a high spin injection efficiency (~92%). The red region is about 10 nm wide and corresponds to a 5 nm high step on the surface where the spin injection efficiency drops to (16%).